VP3203N3-G

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Mfr.Part #
VP3203N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET P-CH 30V 650MA TO92-3
Stock
7,494
In Stock :
7,494

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
-30V
Length :
5.21mm
Fall Time (Typ) :
15 ns
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Terminal Form :
THROUGH-HOLE
Number of Channels :
1
FET Type :
P-Channel
Width :
4.19mm
Mounting :
Through Hole
Rad Hardened :
No
Power Dissipation Ambient-Max :
0.74 W
Operating Temperature :
-55°C~150°C TJ
DS Breakdown Voltage-Min :
30 V
Power Dissipation (Max) :
740mW (Ta)
RoHS :
Details
Package :
Bag
Configuration :
Single
Weight :
453.59237mg
Drain-source On Resistance-Max :
0.6Ohm
Power Dissipation-Max :
740mW Ta
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Drain to Source Voltage (Vdss) :
30V
Package Type :
TO-92
Continuous Drain Current (ID) :
650mA
Package Shape :
Round
Number of Terminals :
3
Gate to Source Voltage (Vgs) :
20V
Supplier Device Package :
TO-92-3
Radiation Hardening :
No
Base Product Number :
VP3203
Published :
2013
Surface Mount :
No
Current - Continuous Drain (Id) @ 25°C :
650mA Tj
Factory Lead Time :
14 Weeks
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Through Hole
Rise Time :
15ns
Rds On (Max) @ Id, Vgs :
600m Ω @ 3A, 10V
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Type :
Power MOSFET
FET Feature :
--
Turn On Delay Time :
10 ns
Transistor Polarity :
P-Channel
Reach Compliance Code :
Compliant
Transistor Application :
SWITCHING
HTS Code :
8541.21.00.95
Operating Temp Range :
-55C to 150C
Qualification :
-
Continuous Drain Current :
0.65(A)
JEDEC-95 Code :
TO-92
Channel Type :
P
Continuous Drain Current Id :
650
Operating Mode :
ENHANCEMENT MODE
Feedback Cap-Max (Crss) :
60 pF
Maximum Operating Temperature :
+ 150 C
Polarity/Channel Type :
P-Channel
Operating Temperature Classification :
Military
MSL :
-
Turn-Off Delay Time :
25 ns
Number of Terminations :
3
Manufacturer :
Microchip
Power Dissipation-Max (Abs) :
0.74 W
Height :
5.33mm
ECCN Code :
EAR99
Terminal Finish :
Matte Tin (Sn) - annealed
Product Status :
Active
Vgs (Max) :
±20V
Brand :
Microchip Technology / Atmel
Product :
MOSFET Small Signal
Vgs(th) (Max) @ Id :
3.5V @ 10mA
Packaging :
Bulk
Product Category :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 25V
JESD-30 Code :
O-PBCY-T3
Power Dissipation :
740mW
Transistor Type :
1 P-Channel
Minimum Operating Temperature :
- 55 C
Element Configuration :
Single
Polarity :
P
Transistor Element Material :
SILICON
Pin Count :
3
Peak Reflow Temperature (Cel) :
Not Applicable
Number of Pins :
3
Qualification Status :
Not Qualified
Number of Elements :
1
Series :
--
Additional Feature :
HIGH INPUT IMPEDANCE
Drain Current-Max (Abs) (ID) :
0.65A
Drain-Source On-Volt :
30(V)
Product Type :
MOSFET
JESD-609 Code :
e3
Gate-Source Voltage (Max) :
±20(V)
Mounting Style :
Through Hole
Channel Mode :
Enhancement
Terminal Position :
BOTTOM
Datasheets
VP3203N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology VP3203N3-G from Xinshop,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Type:Power MOSFET, Number of Terminations:3, Number of Pins:3, VP3203N3-G pinout, VP3203N3-G datasheet PDF, VP3203N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology VP3203N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology VP3203N3-G


P-Channel Bulk 600m Ω @ 3A, 10V ±20V 300pF @ 25V 30V TO-226-3, TO-92-3 (TO-226AA)

VP3203N3-G Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 300pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 650mA amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.A device can conduct a maximum continuous current of [0.65A] according to its drain current.It is [25 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 30 V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

VP3203N3-G Features


a continuous drain current (ID) of 650mA
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 25 ns
a 30V drain to source voltage (Vdss)


VP3203N3-G Applications


There are a lot of Microchip Technology
VP3203N3-G applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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