ZDM4206NTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

1Ohm

Fall Time (Typ) :

15 ns

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 N-Channel (Dual)

Turn On Delay Time :

8 ns

Package / Case :

8-SMD, Gull Wing

Current Rating :

1A

Drain to Source Breakdown Voltage :

60V

Published :

1997

Mount :

Surface Mount

Number of Elements :

2

JESD-30 Code :

R-PDSO-G10

Transistor Element Material :

SILICON

Rise Time :

12ns

Number of Channels :

2

Reach Compliance Code :

Unknown

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

1A

Rds On (Max) @ Id, Vgs :

1 Ω @ 1.5A, 10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

2.75W

Turn-Off Delay Time :

12 ns

FET Feature :

Logic Level Gate

Base Part Number :

ZDM4206N

Drain Current-Max (Abs) (ID) :

1A

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

60V

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

10

Max Power Dissipation :

2.25W

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 1mA

JESD-609 Code :

e3