ZXTP2012ZTA
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- Mfr.Part #
- ZXTP2012ZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 4.3A SOT89-3
- Stock
- 7,125
- In Stock ：
- 7,125
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 120MHz
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Max Junction Temperature (Tj) :
- 150°C
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- -60V
- Voltage - Rated DC :
- -60V
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 1.6mm
- Base Part Number :
- ZXTP2012
- Transistor Application :
- SWITCHING
- Continuous Collector Current :
- -4.3A
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-243AA
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- No
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- -4.3A
- Factory Lead Time :
- 15 Weeks
- Max Power Dissipation :
- 2.1W
- Contact Plating :
- Tin
- Published :
- 2005
- hFE Min :
- 100
- Voltage :
- 60V
- Current - Collector (Ic) (Max) :
- 4.3A
- Polarity/Channel Type :
- PNP
- Frequency :
- 120MHz
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 215mV @ 500mA, 5A
- Transition Frequency :
- 120MHz
- Number of Pins :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Current :
- 4A
- Max Breakdown Voltage :
- 60V
- Width :
- 2.6mm
- Power Dissipation :
- 1.5W
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSFM-F3
- Terminal Form :
- Flat
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Emitter Breakdown Voltage :
- -80V
- Collector Base Voltage (VCBO) :
- -100V
- Max Collector Current :
- -4.3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Weight :
- 51.993025mg
- Length :
- 4.6mm
- Collector Emitter Saturation Voltage :
- -160mV
- Emitter Base Voltage (VEBO) :
- -7V
- Datasheets
- ZXTP2012ZTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP2012ZTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 2A 1V.The collector emitter saturation voltage is -160mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -4.3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.Its current rating is -4.3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 120MHz.There is a breakdown input voltage of 60V volts that it can take.In extreme cases, the collector current can be as low as -4.3A volts.
ZXTP2012ZTA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -160mV
the vce saturation(Max) is 215mV @ 500mA, 5A
the emitter base voltage is kept at -7V
the current rating of this device is -4.3A
a transition frequency of 120MHz
ZXTP2012ZTA Applications
There are a lot of Diodes Incorporated ZXTP2012ZTA applications of single BJT transistors.
-
Driver
-
Muting
-
Interface
-
Inverter
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