ZXTP2013ZTA
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- Mfr.Part #
- ZXTP2013ZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 3.5A SOT89-3
- Stock
- 61,986
- In Stock ：
- 61,986
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- -3.5A
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Base Part Number :
- ZXTP2013
- Gain Bandwidth Product :
- 125MHz
- Terminal Form :
- Flat
- Length :
- 4.6mm
- Terminal Position :
- Dual
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Breakdown Voltage :
- 100V
- Mount :
- Surface Mount
- Published :
- 2006
- Number of Pins :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 400mA, 4A
- Radiation Hardening :
- No
- Frequency :
- 125MHz
- Collector Base Voltage (VCBO) :
- 140V
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -100V
- Max Power Dissipation :
- 2.1W
- Package / Case :
- TO-243AA
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Width :
- 2.6mm
- Power Dissipation :
- 2.1W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 7V
- Max Collector Current :
- 3.5A
- Collector Emitter Saturation Voltage :
- -240mV
- Pbfree Code :
- No
- Collector Emitter Voltage (VCEO) :
- 100V
- Weight :
- 51.993025mg
- Number of Terminations :
- 4
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- -3.5A
- Pin Count :
- 4
- Transition Frequency :
- 125MHz
- Max Breakdown Voltage :
- 100V
- Polarity/Channel Type :
- PNP
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn)
- Case Connection :
- COLLECTOR
- Height :
- 1.6mm
- Transistor Element Material :
- SILICON
- Datasheets
- ZXTP2013ZTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP2013ZTA Overview
In this device, the DC current gain is 100 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -240mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 400mA, 4A.Maintaining the continuous collector voltage at -3.5A is essential for high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-3.5A).125MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 3.5A volts.
ZXTP2013ZTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 300mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is -3.5A
a transition frequency of 125MHz
ZXTP2013ZTA Applications
There are a lot of Diodes Incorporated
ZXTP2013ZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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