1N4448 vs 1N4148 Fast Switching Diode: Datasheet

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1N4448 vs 1N4148 Fast Switching Diode: Datasheet

1n4448:Diode 100 V 200mA Through Hole DO-35

1n4148:Diode 100 V 200mA Through Hole DO-35

Introduction

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Fast switching diodes are essential components in electronic circuits, enabling efficient rectification, signal detection, and protection. Among the popular choices in this category are the 1N4448 diodes and 1N4148 diodes. While these diodes share many similarities, they also possess distinct characteristics that make them suitable for different applications. In this article, we will compare the 1N4448 and 1N4148 diodes, highlighting their differences and helping you make an informed decision when selecting the appropriate diode for your circuit.


What is 1N4448?

* 1N4448 Pinout

image

* 1N4448 CAD-Model

Symbol

1N4148-symbol  

Footprint

 1N4148-footprint

 

3D-model

image



* 1N4448 Features

  - Fast-switching diode similar to 1N4148.

  - Higher peak repetitive reverse voltage: 150V.

  - Forward continuous current: 300mA.

  - Fast recovery time.

  - Suitable for applications requiring a higher voltage rating.



* 1N4448 Applications

- **1N4448 Applications:**

  - High-speed switching applications.

  - Voltage clamping.

  - Signal rectification.

  - Fast recovery applications.

  - Circuit protection.



* 1N4448 Package

1N4448 PACKAGE DIMENSION


What is 1N4148?


* 1N4148 Pinout

1N4148-pin

* 1N4148 CAD-Model

Symbol

1N4148-symbol  

Footprint

 1N4148-footprint 

3D-model

1N4148-3d

 *1N4148 Features

- **1N4148 Features:**

  - General-purpose silicon switching diode.

  - Fast-switching speed.

  - Peak repetitive reverse voltage: 100V.

  - Forward continuous current: 300mA.

  - Low forward voltage drop.

  - Small signal diode suitable for signal and general-purpose applications.



 *1N4148 Applications

- **1N4148 Applications:**

  - Signal rectification.

  - Clipping and switching applications.

  - Voltage spike suppression.

  - General-purpose diode applications.



* 1N4148 Package

1N4448 PACKAGE DIMENSION


* 1N4448 Diode Equivalent and 1N4148  Diode Equivalent

- The 1N4148 and 1N4448 are equivalent diodes with slight variations in their voltage ratings. In many applications, they can be used interchangeably depending on the specific voltage requirements of the circuit.

- Some equivalent diodes to 1N4148 and 1N4448 include 1N914, 1N914B, BA85, 1N914C, and BA85-02.


1N4448 vs 1N4148 Difference

Forward Voltage Drop

The forward voltage drop is a crucial parameter to consider when choosing a diode. The 1N4448 diode typically exhibits a lower forward voltage drop compared to the 1N4148. This means that the 1N4448 diode will have a slightly lower

 

voltage drop when conducting current. This characteristic can be advantageous in circuits where minimizing voltage losses is crucial.

 

Reverse Recovery Time

The reverse recovery time is another critical factor to consider, especially in high-speed switching applications. The 1N4448 diode boasts a faster reverse recovery time compared to the 1N4148. This means that

 

 it can swiftly transition from the conducting state to the blocking state when the polarity of the applied voltage changes. The faster reverse recovery time of the 1N4448 makes it suitable for applications that demand rapid switching and high-frequency operation.

 

Power Dissipation

Power dissipation is an important consideration to ensure the diode can handle the required power levels without getting damaged.

 

 In this aspect, the 1N4448 diode outperforms the 1N4148. The 1N4448 can withstand slightly higher power dissipation compared to the 1N4148. This characteristic makes the 1N4448 diode more suitable for applications where higher power levels need to be handled.

 

Working principle

       How do 1N4448 vs 1N4148 work? Both the 1N4448 and 1N4148 operate based on the principles of semiconductor junction behavior.

 

       In forward bias, when the anode (P-type side) is at a higher potential than the cathode (N-type side), current can flow through the diode. The PN junction allows current to pass, as the excess positive charges in the P-type material attract the negatively charged electrons from the N-type material. This creates a current flow from the anode to the cathode.

 

       In reverse bias, with the anode at a lower potential than the cathode, the PN junction acts as an insulator and restricts the flow of current. The depletion region widens, creating a high resistance barrier that prevents most of the current from passing through.

 

       Both diodes are commonly used for signal rectification, switching, and protection purposes. They allow current to flow in one direction (from anode to cathode) while blocking current in the opposite direction. This property makes them suitable for converting AC signals into pulsating DC signals and for various electronic applications.




1N4448 vs 1N4148 Datasheet

Please swipe to the last two part  for Downloading 1N4448 pdf, 1N4148 Datasheet1N4448 vs 1N4148 specifications and product comparison.


1N4448 vs 1N4148 PDF

image


image


Conclusion

Both the diode 1N4448 and diode1N4148 fast switching diodes are widely used in electronic circuits. The choice between them depends on the specific requirements of the circuit and the desired performance characteristics. If minimizing voltage drops and achieving faster switching speeds are crucial, the 1N4448 signal diode would be a suitable choice. On the other hand, if power dissipation is a concern, the 1N4148 signal diode can handle slightly higher power levels. It is important to carefully analyze the circuit requirements and select the appropriate diode to ensure optimal performance.



Specifications

Manufacturer :
onsemi
Product Category :
Diodes - Rectifiers - Single
Average Rectified Current :
200mA
Base Part Number :
1N4448
Capacitance :
2pF
Capacitance @ Vr, F :
2pF @ 0V 1MHz
Contact Plating :
Tin
Current :
2A
Current - Average Rectified (Io) :
200mA
Current - Reverse Leakage @ Vr :
5μA @ 75V
Current Rating :
200mA
Diode Type :
Standard
Element Configuration :
Single
Factory Lead Time :
18 Weeks
Forward Current :
300mA
Forward Voltage :
1V
Height :
1.91mm
Lead Free :
Lead Free
Length :
4.56mm
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Max Forward Surge Current (Ifsm) :
4A
Max Junction Temperature (Tj) :
175°C
Max Operating Temperature :
175°C
Max Power Dissipation :
500mW
Max Repetitive Reverse Voltage (Vrrm) :
100V
Max Reverse Voltage (DC) :
100V
Max Surge Current :
4A
Min Operating Temperature :
-55°C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Mounting Type :
Through Hole
Number of Pins :
2
Operating Temperature - Junction :
-65°C~175°C
Output Current :
200mA
Package / Case :
DO-204AH, DO-35, Axial
Packaging :
Bulk
Part Status :
Active
Peak Non-Repetitive Surge Current :
4A
Peak Reverse Current :
5μA
Polarity :
Standard
Power Dissipation :
500mW
Published :
2016
Radiation Hardening :
No
REACH SVHC :
No SVHC
Recovery Time :
4 ns
Reverse Recovery Time :
4 ns
RoHS Status :
ROHS3 Compliant
Speed :
Small Signal =< 200mA (Io), Any Speed
Supplier Device Package :
DO-35
Voltage :
75V
Voltage - DC Reverse (Vr) (Max) :
100V
Voltage - Forward (Vf) (Max) @ If :
1V @ 100mA
Voltage - Rated DC :
100V
Weight :
126.01363mg
Width :
1.91mm

Datasheets

Datasheets
1N4448

Frequently Asked Questions

What is the difference between 1N4148 and 1N4448?

The main difference between 1N4148 and 1N4448 is the peak repetitive reverse voltage rating, with 1N4448 having a higher voltage rating. 1N4148: It is a general-purpose silicon switching diode with a peak repetitive reverse voltage rating of 100V. It is commonly used in signal and general-purpose applications. 1N4448: It is also a fast-switching diode but with a slightly higher peak repetitive reverse voltage rating of 150V. This makes it suitable for applications that require a higher voltage rating compared to the 1N4148.

What is the difference between 1N4148 and 1N4149?

The 1N4148 and 1N4149 are both fast-switching diodes as well, and the key differences between them are: 1N4148: As mentioned earlier, the 1N4148 is a general-purpose silicon switching diode with a peak repetitive reverse voltage rating of 100V. 1N4149: The 1N4149 is very similar to the 1N4148 but with a higher peak repetitive reverse voltage rating of 200V. This higher voltage rating makes it suitable for applications that require a higher voltage tolerance compared to the 1N4148. In summary, the main difference between 1N4148 and 1N4149 is the peak repetitive reverse voltage rating, with 1N4149 having a higher voltage rating.

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