2DD2652-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tape and Reel (TR)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Gain Bandwidth Product :

260MHz

Emitter Base Voltage (VEBO) :

6V

Element Configuration :

Single

Max Power Dissipation :

300mW

Operating Temperature :

-55°C~150°C TJ

Published :

2008

Factory Lead Time :

15 Weeks

JESD-609 Code :

e3

Max Collector Current :

1.5A

Transistor Type :

NPN

Transistor Element Material :

SILICON

Transition Frequency :

260MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA 2V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

500mW

Collector Base Voltage (VCBO) :

15V

Frequency :

260MHz

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Mount :

Surface Mount

Transistor Application :

SWITCHING

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

200mV @ 25mA, 500mA

Width :

1.3mm

Base Part Number :

2DD2652

Current - Collector Cutoff (Max) :

100nA ICBO

Length :

2.15mm

Pin Count :

3

Number of Pins :

3

Polarity/Channel Type :

NPN

Terminal Position :

Dual

ECCN Code :

EAR99

Number of Terminations :

3

Package / Case :

SC-70, SOT-323

Power - Max :

300mW

Collector Emitter Voltage (VCEO) :

12V

Collector Emitter Saturation Voltage :

200mV

Weight :

6.010099mg

Mounting Type :

Surface Mount

Height :

1mm

Pbfree Code :

yes

Max Breakdown Voltage :

12V

Collector Emitter Breakdown Voltage :

12V