2PA1774SM,315
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- Mfr.Part #
- 2PA1774SM,315
- Manufacturer
- Nexperia
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.1A SOT883
- Stock
- 66,176
- In Stock ：
- 66,176
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 40V
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 100mA
- Gain Bandwidth Product :
- 100MHz
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Power Dissipation :
- 430mW
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 430mW
- Published :
- 2009
- Package / Case :
- SC-101, SOT-883
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Series :
- Automotive, AEC-Q101
- Base Part Number :
- 2PA1774
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 40V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Radiation Hardening :
- No
- Frequency :
- 100MHz
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 1mA 6V
- hFE Min :
- 270
- Datasheets
- 2PA1774SM,315
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-101, SOT-883 Tape & Reel (TR) Surface Mount
2PA1774SM,315 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 1mA 6V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 100mA volts.
2PA1774SM,315 Features
the DC current gain for this device is 270 @ 1mA 6V
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
2PA1774SM,315 Applications
There are a lot of Nexperia USA Inc.
2PA1774SM,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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