2SA1036KT146Q
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- Mfr.Part #
- 2SA1036KT146Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.5A SMT3
- Stock
- 18,768
- In Stock ：
- 18,768
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e1
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 500mA
- Terminal Position :
- Dual
- Power - Max :
- 200mW
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 13 Weeks
- Collector Base Voltage (VCBO) :
- -40V
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Transition Frequency :
- 200MHz
- HTS Code :
- 8541.21.00.75
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Current Rating :
- -500mA
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP
- Max Power Dissipation :
- 200mW
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- -500mA
- Base Part Number :
- 2SA1036
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transistor Element Material :
- SILICON
- VCEsat-Max :
- 0.4 V
- Voltage - Rated DC :
- -32V
- Collector Emitter Voltage (VCEO) :
- 600mV
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Contact Plating :
- Copper, Silver, Tin
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 200MHz
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- -5V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Max Breakdown Voltage :
- 32V
- Operating Temperature :
- 150°C TJ
- Published :
- 2009
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- hFE Min :
- 82
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Collector Emitter Breakdown Voltage :
- 32V
- Datasheets
- 2SA1036KT146Q
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SA1036KT146Q Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 30mA, 300mA.Single BJT transistor is recommended to keep the continuous collector voltage at -500mA in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.The breakdown input voltage is 32V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
2SA1036KT146Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 200MHz
2SA1036KT146Q Applications
There are a lot of ROHM Semiconductor
2SA1036KT146Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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