2SA1036KT146R
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- Mfr.Part #
- 2SA1036KT146R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.5A SMT3
- Stock
- 1,890
- In Stock ：
- 1,890
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Max Power Dissipation :
- 200mW
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Voltage - Rated DC :
- -32V
- hFE Min :
- 120
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- 2SA1036
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- Published :
- 2004
- Frequency :
- 200MHz
- Power Dissipation :
- 200mW
- Gain Bandwidth Product :
- 200MHz
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Current Rating :
- -500mA
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 500mA
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 32V
- Collector Base Voltage (VCBO) :
- 40V
- Collector Emitter Saturation Voltage :
- -600mV
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 32V
- VCEsat-Max :
- 0.4 V
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 32V
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- -500mA
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Contact Plating :
- Copper, Silver, Tin
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 13 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 200MHz
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Datasheets
- 2SA1036KT146R
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SA1036KT146R Overview
In this device, the DC current gain is 120 @ 100mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 30mA, 300mA.Maintaining the continuous collector voltage at -500mA is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).200MHz is present in the transition frequency.An input voltage of 32V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
2SA1036KT146R Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 200MHz
2SA1036KT146R Applications
There are a lot of ROHM Semiconductor
2SA1036KT146R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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