2SA1416T-TD-E
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- Mfr.Part #
- 2SA1416T-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A PCP
- Stock
- 9,542
- In Stock ：
- 9,542
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Surface Mount :
- yes
- Max Power Dissipation :
- 500mW
- Case Connection :
- COLLECTOR
- hFE Min :
- 100
- Current - Collector (Ic) (Max) :
- 1A
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Length :
- 4.5mm
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- JESD-609 Code :
- e6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 120V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 40mA, 400mA
- Number of Elements :
- 1
- Reach Compliance Code :
- not_compliant
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Collector Emitter Breakdown Voltage :
- 100V
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Factory Lead Time :
- 4 Weeks
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Max Frequency :
- 120MHz
- Collector Emitter Saturation Voltage :
- -600mV
- Max Collector Current :
- 1A
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 120MHz
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 100V
- Height :
- 1.5mm
- Package / Case :
- TO-243AA
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 120MHz
- Lead Free :
- Lead Free
- Width :
- 2.5mm
- Published :
- 2012
- Datasheets
- 2SA1416T-TD-E
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA1416T-TD-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 40mA, 400mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 120MHz.During maximum operation, collector current can be as low as 1A volts.
2SA1416T-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SA1416T-TD-E Applications
There are a lot of ON Semiconductor
2SA1416T-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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