2SA1419S-TD-E
- Mfr.Part #
- 2SA1419S-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 160V 1.5A PCP
- Stock
- 6,363
- In Stock :
- 6,363
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -200mV
- Collector Emitter Breakdown Voltage :
- 160V
- Base Part Number :
- 2SA1419
- Width :
- 2.5mm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Length :
- 4.5mm
- Contact Plating :
- Tin
- JESD-609 Code :
- e6
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 180V
- Power Dissipation :
- 500mW
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Element Configuration :
- Single
- Transition Frequency :
- 120MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Number of Pins :
- 3
- Published :
- 2012
- Terminal Form :
- Flat
- Max Collector Current :
- 1.5A
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Frequency :
- 120MHz
- Height :
- 1.5mm
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Max Power Dissipation :
- 500mW
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 120MHz
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 160V
- Factory Lead Time :
- 2 Weeks
- Max Breakdown Voltage :
- 160V
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-243AA
- Pin Count :
- 3
- Datasheets
- 2SA1419S-TD-E

PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA1419S-TD-E Overview
This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -200mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 120MHz.A breakdown input voltage of 160V volts can be used.A maximum collector current of 1.5A volts is possible.
2SA1419S-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SA1419S-TD-E Applications
There are a lot of ON Semiconductor
2SA1419S-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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