2SA1507T
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- Mfr.Part #
- 2SA1507T
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 160V 1.5A TO225-3
- Stock
- 1,600
- In Stock ：
- 1,600
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 160V
- Collector Emitter Voltage (VCEO) :
- 160V
- Published :
- 2010
- Collector Base Voltage (VCBO) :
- 180V
- Number of Terminations :
- 3
- Transition Frequency :
- 120MHz
- Case Connection :
- Isolated
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Configuration :
- Single
- Pin Count :
- 3
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Surface Mount :
- No
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 5V
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 1.5A
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- ECCN Code :
- EAR99
- Power Dissipation :
- 1.5W
- Radiation Hardening :
- No
- Package / Case :
- TO-225AA, TO-126-3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Frequency :
- 120MHz
- hFE Min :
- 100
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Current - Collector (Ic) (Max) :
- 1.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Max Power Dissipation :
- 1.5W
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- 2SA1507T
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
2SA1507T Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 120MHz.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
2SA1507T Features
the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SA1507T Applications
There are a lot of ON Semiconductor
2SA1507T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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