2SA1695

Manufacturer :

Sanken Electric Co., Ltd.

Product Category :

Transistors - Bipolar (BJT) - Single

Qualification Status :

Not Qualified

Number of Elements :

1

Published :

1999

Number of Terminations :

3

Power Dissipation :

100(W)

Supplier Device Package :

TO-3P

Rad Hardened :

No

Pin Count :

3

Package Type :

TO-3P

Current - Collector (Ic) (Max) :

10A

Transistor Polarity :

PNP

Power Dissipation-Max (Abs) :

100W

Product Status :

Active

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

AMPLIFIER

Emitter-Base Voltage :

6(V)

Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

500mV @ 500mA, 5A

Collector-Base Voltage :

140(V)

Polarity/Channel Type :

PNP

Surface Mount :

No

Terminal Position :

Single

Operating Temperature :

150°C TJ

Operating Temp Range :

-55C to 150C

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Transition Frequency :

20MHz

Collector Current (DC) :

10(A)

Voltage - Collector Emitter Breakdown (Max) :

140V

Category :

Bipolar Power

Operating Temperature Classification :

Military

Frequency - Transition :

20MHz

Package :

Bulk

Packaging :

Bulk

Current - Collector Cutoff (Max) :

10μA ICBO

DC Current Gain :

50

ECCN Code :

EAR99

Series :

-

Frequency :

20(MHz)

Mounting :

Through Hole

Transistor Element Material :

SILICON

Collector-Emitter Voltage :

140(V)

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 3A 4V

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-3P-3 Full Pack

Factory Lead Time :

24 Weeks

Power - Max :

100W

Transistor Type :

PNP