2SA1797T100P
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- Mfr.Part #
- 2SA1797T100P
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A MPT3
- Stock
- 80,519
- In Stock ：
- 80,519
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2006
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 50mA, 1A
- Terminal Form :
- Flat
- Lead Free :
- Lead Free
- Max Collector Current :
- 3A
- Element Configuration :
- Single
- Power Dissipation :
- 2W
- Terminal Finish :
- TIN COPPER
- Number of Pins :
- 4
- Base Part Number :
- 2SA1797
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- -6V
- Contact Plating :
- Copper, Tin
- VCEsat-Max :
- 0.35 V
- hFE Min :
- 82
- Transistor Type :
- PNP
- Voltage - Rated DC :
- -50V
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 2W
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 200MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Current - Collector (Ic) (Max) :
- 2A
- JESD-30 Code :
- R-PSSO-F3
- Package / Case :
- TO-243AA
- Mount :
- Surface Mount
- Current Rating :
- -3A
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 500mA 2V
- Case Connection :
- COLLECTOR
- Max Breakdown Voltage :
- 50V
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e2
- Transition Frequency :
- 200MHz
- Gain Bandwidth Product :
- 200MHz
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- 2SA1797T100P
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA1797T100P Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 82 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 50mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 3A volts.
2SA1797T100P Features
the DC current gain for this device is 82 @ 500mA 2V
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -3A
a transition frequency of 200MHz
2SA1797T100P Applications
There are a lot of ROHM Semiconductor
2SA1797T100P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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