BC56-10PASX
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- Mfr.Part #
- BC56-10PASX
- Manufacturer
- Nexperia
- Package / Case
- 3-UDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A DFN2020D-3
- Stock
- 20,276
- In Stock ：
- 20,276
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Configuration :
- Single
- Max Breakdown Voltage :
- 80V
- Power - Max :
- 420mW
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 8 Weeks
- Collector Base Voltage (VCBO) :
- 100V
- Frequency - Transition :
- 180MHz
- Number of Pins :
- 3
- Pin Count :
- 3
- Number of Terminations :
- 3
- Max Collector Current :
- 1A
- Polarity/Channel Type :
- NPN
- Terminal Form :
- NO LEAD
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 420mW
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Published :
- 2014
- Package / Case :
- 3-UDFN Exposed Pad
- Collector Emitter Breakdown Voltage :
- 80V
- Packaging :
- Cut Tape (CT)
- Number of Elements :
- 1
- Transition Frequency :
- 180MHz
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 500mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Datasheets
- BC56-10PASX
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-UDFN Exposed Pad Cut Tape (CT) Surface Mount
BC56-10PASX Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 63 @ 150mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 1A volts.
BC56-10PASX Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BC56-10PASX Applications
There are a lot of Nexperia USA Inc.
BC56-10PASX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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