BS170
- Mfr.Part #
- BS170
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 500MA TO92-3
- Stock
- 200
- In Stock :
- 200
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage :
- 60V
- Power Dissipation :
- 830mW
- Contact Plating :
- Copper, Silver, Tin
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Ta
- Width :
- 4.19mm
- Input Capacitance :
- 24pF
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Rds On Max :
- 5 Ω
- Input Capacitance (Ciss) (Max) @ Vds :
- 40pF @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 5.33mm
- Resistance :
- 5Ohm
- Max Operating Temperature :
- 150°C
- Rds On (Max) @ Id, Vgs :
- 5Ohm @ 200mA, 10V
- Current :
- 5A
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Published :
- 2005
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package :
- TO-92-3
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 60V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Current Rating :
- 500mA
- Drain to Source Resistance :
- 5Ohm
- Length :
- 5.2mm
- Weight :
- 4.535924g
- Power Dissipation-Max :
- 830mW Ta
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Bulk
- Voltage - Rated DC :
- 60V
- Factory Lead Time :
- 11 Weeks
- Number of Elements :
- 1
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Threshold Voltage :
- 2.1V
- REACH SVHC :
- No SVHC
- Base Part Number :
- BS170
- Drain to Source Breakdown Voltage :
- 60V
- Nominal Vgs :
- 2.1 V
- Lead Free :
- Lead Free
- Min Operating Temperature :
- -55°C
- Continuous Drain Current (ID) :
- 500mA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Datasheets
- BS170

N-Channel Bulk 5Ohm @ 200mA, 10V ±20V 40pF @ 10V 60V TO-226-3, TO-92-3 (TO-226AA)
BS170 Description
These BS170 N-channel enhanced mode field effect transistors are produced using ONSemi's proprietary high cell density DMOS technology. These products are designed to minimize-state resistance while providing rugged, reliable and fast switching performance. They can be used in most applications that require up to 500 mA DC. These products are particularly suitable for low-voltage, low-current applications such as small servo motor controls, power MOSFET gate drivers and other switching applications.
BS170 Features
? High Density Cell Design for Low RDS(ON)
? Voltage Controlled Small Signal Switch
? Rugged and Reliable
? High Saturation Current Capability
? These are Pb?Free Devices
BS170 Applications
small servo motor controls
power MOSFET gate drivers
other switching applications
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