BS170G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Height :

5.33mm

Voltage - Rated DC :

60V

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Lead Free :

Lead Free

Published :

2005

Transistor Element Material :

SILICON

Length :

5.2mm

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Current Rating :

500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Weight :

4.535924g

Turn-Off Delay Time :

4 ns

Number of Terminations :

3

REACH SVHC :

No SVHC

Width :

4.19mm

Terminal Position :

BOTTOM

Vgs(th) (Max) @ Id :

3V @ 1mA

Power Dissipation :

350mW

Drain to Source Breakdown Voltage :

60V

Contact Plating :

Copper, Silver, Tin

Pbfree Code :

yes

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Continuous Drain Current (ID) :

500mA

JESD-609 Code :

e1

Nominal Vgs :

2 V

Rds On (Max) @ Id, Vgs :

5 Ω @ 200mA, 10V

Threshold Voltage :

2V

Surface Mount :

No

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Drain Current-Max (Abs) (ID) :

0.5A

Resistance :

5Ohm

Turn On Delay Time :

4 ns

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation-Max :

350mW Ta

Packaging :

Tube

RoHS Status :

RoHS Compliant

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)