BSO203SPHXUMA1
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- Mfr.Part #
- BSO203SPHXUMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 7A 8DSO
- Stock
- 11,857
- In Stock ：
- 11,857
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Series :
- OptiMOS™
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Rise Time :
- 55ns
- Published :
- 2010
- Avalanche Energy Rating (Eas) :
- 97 mJ
- Gate to Source Voltage (Vgs) :
- 12V
- JESD-609 Code :
- e3
- Halogen Free :
- Halogen Free
- Terminal Position :
- Dual
- FET Type :
- P-Channel
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Drain to Source Voltage (Vdss) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 1.6W Ta
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 1.2V @ 100μA
- Vgs (Max) :
- ±12V
- Factory Lead Time :
- 18 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 1.6W
- Pin Count :
- 8
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- Not Qualified
- Contact Plating :
- Tin
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rds On (Max) @ Id, Vgs :
- 21m Ω @ 8.9A, 4.5V
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Number of Pins :
- 8
- Number of Terminations :
- 8
- Continuous Drain Current (ID) :
- 7A
- Max Dual Supply Voltage :
- -20V
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 4.5V
- Transistor Element Material :
- SILICON
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 3750pF @ 15V
- Current - Continuous Drain (Id) @ 25°C :
- 7A Ta
- Pulsed Drain Current-Max (IDM) :
- 35.6A
- Number of Elements :
- 1
- Datasheets
- BSO203SPHXUMA1
P-Channel Tape & Reel (TR) 21m Ω @ 8.9A, 4.5V ±12V 3750pF @ 15V 39nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
BSO203SPHXUMA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 97 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3750pF @ 15V.This device has a continuous drain current (ID) of [7A], which is its maximum continuous current.A maximum pulsed drain current of 35.6A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by -20V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).
BSO203SPHXUMA1 Features
the avalanche energy rating (Eas) is 97 mJ
a continuous drain current (ID) of 7A
based on its rated peak drain current 35.6A.
a 20V drain to source voltage (Vdss)
BSO203SPHXUMA1 Applications
There are a lot of Infineon Technologies
BSO203SPHXUMA1 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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