BSO204PNTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

7A

Max Power Dissipation :

2W

DS Breakdown Voltage-Min :

20V

RoHS Status :

Non-RoHS Compliant

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Mounting Type :

Surface Mount

Number of Terminations :

8

Number of Elements :

2

Vgs(th) (Max) @ Id :

1.2V @ 60μA

Rds On (Max) @ Id, Vgs :

30m Ω @ 7A, 4.5V

Series :

OptiMOS™

Gate Charge (Qg) (Max) @ Vgs :

35.8nC @ 4.5V

Drain to Source Voltage (Vdss) :

20V

Drain-source On Resistance-Max :

0.03Ohm

Avalanche Energy Rating (Eas) :

63 mJ

Number of Pins :

8

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Base Part Number :

BSO204

Published :

2008

Power - Max :

2W

FET Type :

2 P-Channel (Dual)

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

7A

Input Capacitance (Ciss) (Max) @ Vds :

1513pF @ 15V

Mount :

Surface Mount

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)