BSP129L6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1V @ 108µA

Terminal Form :

Gull wing

Subcategory :

FET General Purpose Power

ECCN Code :

EAR99

Terminal Finish :

MATTE TIN

Current Rating :

50 mA

Number of Terminals :

4

Product Status :

Active

Drain to Source Resistance :

6 Ω

Max Operating Temperature :

150 °C

RoHS :

Compliant

Surface Mount :

yes

Power Dissipation :

1.8 W

Voltage Rating (DC) :

240 V

Rds On (Max) @ Id, Vgs :

6Ohm @ 350mA, 10V

Drive Voltage (Max Rds On, Min Rds On) :

0V, 10V

Power Dissipation-Max (Abs) :

1.8 W

Series :

SIPMOS®

Nominal Vgs :

-1.4 V

Drain to Source Voltage (Vdss) :

240 V

Continuous Drain Current Id :

0.35

Number of Pins :

4

Power Dissipation (Max) :

1.8W (Ta)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

4

Number of Elements :

1

Package :

Bulk

Drain-source On Resistance-Max :

6 Ω

Case Connection :

DRAIN

Technology :

MOSFET (Metal Oxide)

Operating Temperature :

-55°C ~ 150°C (TJ)

Current - Continuous Drain (Id) @ 25°C :

350mA (Ta)

Lead Free :

Lead Free

Package Shape :

RECTANGULAR

Mount :

Surface Mount

FET Type :

N-Channel

Polarity/Channel Type :

N-Channel

Mounting Type :

Surface Mount

Max Power Dissipation :

1.8 W

Radiation Hardening :

No

Terminal Position :

Dual

Qualification Status :

Not Qualified

Supplier Device Package :

PG-SOT223-4-21

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-On Delay Time :

4.4 ns

FET Feature :

Depletion Mode

JESD-30 Code :

R-PDSO-G4

Operating Mode :

Depletion Mode

Turn-Off Delay Time :

22 ns

Drain Current-Max (Abs) (ID) :

0.35 A

Gate to Source Voltage (Vgs) :

20 V

Min Operating Temperature :

-55 °C

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

240 V

Channel Type :

N

Input Capacitance (Ciss) (Max) @ Vds :

108 pF @ 25 V

REACH SVHC :

No SVHC

Package / Case :

TO-261-4, TO-261AA

Vgs (Max) :

±20V

Reach Compliance Code :

Compliant

DS Breakdown Voltage-Min :

240 V

Rise Time :

4.1 ns

HTS Code :

8541.29.00.75

Gate Charge (Qg) (Max) @ Vgs :

5.7 nC @ 5 V

Pulsed Drain Current-Max (IDM) :

1.4 A

Continuous Drain Current (ID) :

350 mA

Rds On Max :

6 Ω

Manufacturer :

Infineon Technologies AG

Input Capacitance :

108 pF