BSP129L6906

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Pin Count :

4

Drain-source On Resistance-Max :

6 Ω

Mounting Type :

Surface Mount

Voltage Rating (DC) :

240 V

Number of Terminals :

4

Power Dissipation-Max (Abs) :

1.8 W

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G4

Min Operating Temperature :

-55 °C

Operating Mode :

Depletion Mode

Current - Continuous Drain (Id) @ 25°C :

350mA (Ta)

Series :

SIPMOS®

Pulsed Drain Current-Max (IDM) :

1.4 A

Drive Voltage (Max Rds On, Min Rds On) :

0V, 10V

Rds On Max :

6 Ω

Gate to Source Voltage (Vgs) :

20 V

Lead Free :

Lead Free

Power Dissipation (Max) :

1.8W (Ta)

Qualification Status :

Not Qualified

Polarity/Channel Type :

N-Channel

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

240 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package :

Bulk

DS Breakdown Voltage-Min :

240 V

Current Rating :

50 mA

FET Feature :

Depletion Mode

RoHS :

Compliant

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

108 pF @ 25 V

Drain to Source Breakdown Voltage :

240 V

Turn-On Delay Time :

4.4 ns

Package / Case :

TO-261-4, TO-261AA

Reach Compliance Code :

Compliant

Input Capacitance :

108 pF

ECCN Code :

EAR99

Max Operating Temperature :

150 °C

Subcategory :

FET General Purpose Power

Drain Current-Max (Abs) (ID) :

0.35 A

Drain to Source Resistance :

6 Ω

JESD-609 Code :

e3

Max Power Dissipation :

1.8 W

Gate Charge (Qg) (Max) @ Vgs :

5.7 nC @ 5 V

Turn-Off Delay Time :

22 ns

Product Status :

Active

Continuous Drain Current Id :

0.35

Number of Elements :

1

Terminal Position :

Dual

Power Dissipation :

1.8 W

Package Shape :

RECTANGULAR

FET Technology :

METAL-OXIDE SEMICONDUCTOR

HTS Code :

8541.29.00.75

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

6Ohm @ 350mA, 10V

Channel Type :

N

Supplier Device Package :

PG-SOT223-4-21

Number of Pins :

4

Rise Time :

4.1 ns

FET Type :

N-Channel

Vgs (Max) :

±20V

Technology :

MOSFET (Metal Oxide)

Operating Temperature :

-55°C ~ 150°C (TJ)

Continuous Drain Current (ID) :

350 mA

Manufacturer :

Infineon Technologies AG

Vgs(th) (Max) @ Id :

1V @ 108µA