BSP130,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

Published :

2001

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Pin Count :

4

REACH SVHC :

No SVHC

Power Dissipation :

1.5W

Contact Plating :

Tin

Factory Lead Time :

4 Weeks

Package / Case :

TO-261-4, TO-261AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Max Dual Supply Voltage :

300V

Number of Terminations :

4

JESD-30 Code :

R-PDSO-G4

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

350mA

Case Connection :

DRAIN

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 25V

JESD-609 Code :

e3

Threshold Voltage :

2V

Length :

6.7mm

Transistor Element Material :

SILICON

Nominal Vgs :

2 V

Width :

3.7mm

Height :

1.7mm

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

1.5W Ta

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

6 Ω @ 250mA, 10V

Element Configuration :

Single

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Weight :

4.535924g

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

300V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

2V @ 1mA

Resistance :

6Ohm

Radiation Hardening :

No