BSP135H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

45 Ω @ 120mA, 10V

Length :

6.5mm

Drain to Source Breakdown Voltage :

600V

Number of Elements :

1

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Number of Pins :

4

Turn-Off Delay Time :

28 ns

Packaging :

Cut Tape (CT)

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

146pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

4.9nC @ 5V

FET Type :

N-Channel

Case Connection :

DRAIN

Series :

SIPMOS®

Turn On Delay Time :

5.4 ns

Current :

12A

Vgs (Max) :

±20V

Power Dissipation-Max :

1.8W Ta

Power Dissipation :

1.8W

ECCN Code :

EAR99

Pbfree Code :

yes

Published :

2012

FET Feature :

Depletion Mode

Mount :

Surface Mount

Voltage :

600V

Vgs(th) (Max) @ Id :

1V @ 94µA

Radiation Hardening :

No

Package / Case :

TO-261-4, TO-261AA

Width :

3.5mm

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

20V

Rise Time :

5.6ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

600V

Current - Continuous Drain (Id) @ 25°C :

120mA Ta

Factory Lead Time :

10 Weeks

JESD-609 Code :

e3

Element Configuration :

Single

Pin Count :

4

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

120mA

RoHS Status :

ROHS3 Compliant

Recovery Time :

130 ns

Halogen Free :

Halogen Free

Number of Terminations :

4

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Fall Time (Typ) :

182 ns

Height :

1.5mm

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON