BSP135H6433XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

120mA Ta

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

600V

Continuous Drain Current (ID) :

20mA

Series :

SIPMOS®

Number of Pins :

4

Mount :

Surface Mount

Reference Standard :

AEC-Q101

FET Type :

N-Channel

Fall Time (Typ) :

182 ns

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

45 Ω @ 120mA, 10V

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Turn-Off Delay Time :

28 ns

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

600V

Gate Charge (Qg) (Max) @ Vgs :

4.9nC @ 5V

Mounting Type :

Surface Mount

FET Feature :

Depletion Mode

Input Capacitance (Ciss) (Max) @ Vds :

146pF @ 25V

Vgs(th) (Max) @ Id :

1V @ 94µA

Package / Case :

TO-261-4, TO-261AA

Packaging :

Tape and Reel (TR)

Factory Lead Time :

10 Weeks

Element Configuration :

Single

Rise Time :

5.6ns

Contact Plating :

Tin

Number of Terminations :

4

Power Dissipation-Max :

1.8W Ta

Terminal Form :

Gull wing

Published :

2012

Drain Current-Max (Abs) (ID) :

0.12A