BSP135L6433

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

146pF @ 25V

Input Capacitance :

146pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

1.8W Ta

Turn On Delay Time :

5.4 ns

Drain to Source Voltage (Vdss) :

600V

Continuous Drain Current (ID) :

120mA

Radiation Hardening :

No

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

45Ohm @ 120mA, 10V

FET Feature :

Depletion Mode

Max Operating Temperature :

150°C

Package / Case :

TO-261-4, TO-261AA

Gate Charge (Qg) (Max) @ Vgs :

4.9nC @ 5V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

182 ns

Power Dissipation :

1.8W

Published :

2012

Current - Continuous Drain (Id) @ 25°C :

120mA Ta

Turn-Off Delay Time :

28 ns

Number of Pins :

4

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Rise Time :

5.6ns

Rds On Max :

45 Ω

Supplier Device Package :

PG-SOT223-4

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

1V @ 94µA

Series :

SIPMOS®