BSP135L6906

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Product Status :

Active

Continuous Drain Current (ID) :

120 mA

Package Shape :

RECTANGULAR

Lead Free :

Lead Free

Power Dissipation (Max) :

1.8W (Ta)

Turn-Off Delay Time :

28 ns

Turn-On Delay Time :

5.4 ns

Current - Continuous Drain (Id) @ 25°C :

120mA (Ta)

Drain to Source Voltage (Vdss) :

600 V

Max Operating Temperature :

150 °C

Drive Voltage (Max Rds On, Min Rds On) :

0V, 10V

Supplier Device Package :

PG-SOT223-4-21

Max Power Dissipation :

1.8 W

FET Feature :

Depletion Mode

Surface Mount :

yes

Pbfree Code :

yes

Package :

Bulk

Current Rating :

1.1 A

Operating Temperature :

-55°C ~ 150°C (TJ)

Operating Mode :

Depletion Mode

Drain to Source Breakdown Voltage :

600 V

Technology :

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs :

45Ohm @ 120mA, 10V

Number of Pins :

4

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

0.48 A

FET Type :

N-Channel

Rise Time :

5.6 ns

RoHS :

Compliant

Input Capacitance :

146 pF

Terminal Form :

Gull wing

Subcategory :

FET General Purpose Power

Channel Type :

N

Vgs(th) (Max) @ Id :

1V @ 94µA

Drain to Source Resistance :

45 Ω

HTS Code :

8541.29.00.95

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PDSO-G4

Package / Case :

TO-261-4, TO-261AA

Min Operating Temperature :

-55 °C

Input Capacitance (Ciss) (Max) @ Vds :

146 pF @ 25 V

Power Dissipation :

1.8 W

Rds On Max :

45 Ω

Reach Compliance Code :

Compliant

Continuous Drain Current Id :

0.12

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Power Dissipation-Max (Abs) :

1.8 W

Gate to Source Voltage (Vgs) :

20 V

JESD-609 Code :

e3

Pin Count :

4

Gate Charge (Qg) (Max) @ Vgs :

4.9 nC @ 5 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

0.12 A

Manufacturer :

Infineon Technologies AG

Drain-source On Resistance-Max :

45 Ω

Terminal Position :

Dual

Transistor Element Material :

SILICON

Voltage Rating (DC) :

100 V

Packaging :

Tape and Reel

Series :

SIPMOS®

Number of Terminals :

4

Number of Elements :

1

DS Breakdown Voltage-Min :

600 V

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified