BSP149H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Nominal Vgs :

-1.4 V

Published :

2002

Length :

6.5mm

Fall Time (Typ) :

21 ns

Turn-Off Delay Time :

45 ns

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Termination :

SMD/SMT

FET Type :

N-Channel

Factory Lead Time :

10 Weeks

Pulsed Drain Current-Max (IDM) :

2.6A

REACH SVHC :

No SVHC

Package / Case :

TO-261-4, TO-261AA

Power Dissipation-Max :

1.8W Ta

Pbfree Code :

yes

Threshold Voltage :

-1.4V

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 25V

Continuous Drain Current (ID) :

480mA

Series :

SIPMOS®

Power Dissipation :

1.8W

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

Terminal Form :

Gull wing

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

0.66A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Contact Plating :

Tin

JESD-609 Code :

e3

Rise Time :

3.4ns

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 660mA, 10V

Height :

1.6mm

Number of Pins :

4

Case Connection :

DRAIN

Pin Count :

4

Halogen Free :

Halogen Free

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

660mA Ta

Max Dual Supply Voltage :

200V

Turn On Delay Time :

5.1 ns

Vgs(th) (Max) @ Id :

1V @ 400μA

Terminal Position :

Dual

Vgs (Max) :

±20V

Mount :

Surface Mount

Dual Supply Voltage :

200V

Number of Elements :

1

FET Feature :

Depletion Mode

Width :

3.5mm

Drain to Source Breakdown Voltage :

200V