BSP170PH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Halogen Free :

Halogen Free

Number of Pins :

4

Terminal Form :

Gull wing

Case Connection :

DRAIN

Number of Terminations :

4

Fall Time (Typ) :

60 ns

Pbfree Code :

yes

Mount :

Surface Mount

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

60V

Lead Free :

Lead Free

Rise Time :

28ns

Additional Feature :

AVALANCHE RATED

Published :

2007

Power Dissipation :

1.8W

Avalanche Energy Rating (Eas) :

70 mJ

Height :

1.8mm

ECCN Code :

EAR99

JESD-609 Code :

e3

Manufacturer Package Identifier :

PG-SOT223-4

Number of Channels :

1

Packaging :

Cut Tape (CT)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

7.6A

Power Dissipation-Max :

1.8W Ta

FET Type :

P-Channel

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

14 ns

Threshold Voltage :

-3V

Length :

6.5mm

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

-60V

Package / Case :

TO-261-4, TO-261AA

Element Configuration :

Single

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

410pF @ 25V

Drain-source On Resistance-Max :

0.3Ohm

Width :

3.5mm

Continuous Drain Current (ID) :

-1.9A

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

300m Ω @ 1.9A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

Current - Continuous Drain (Id) @ 25°C :

1.9A Ta

Turn-Off Delay Time :

92 ns

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

10 Weeks

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

-60V

Series :

SIPMOS®