BSP171PE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Feedback Cap-Max (Crss) :

55 pF

Number of Pins :

4

Voltage - Rated DC :

-60V

JESD-609 Code :

e3

Power Dissipation :

1.8W

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.3Ohm

Lead Free :

Contains Lead

Package / Case :

TO-261-4, TO-261AA

Number of Elements :

1

Rise Time :

8ns

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current Rating :

-1.9A

ECCN Code :

EAR99

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 25V

Drain to Source Voltage (Vdss) :

60V

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

1.9A Ta

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

1999

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 460μA

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

1.8W Ta

Transistor Element Material :

SILICON

Series :

SIPMOS®

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

300m Ω @ 1.9A, 10V

RoHS Status :

Non-RoHS Compliant

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

1.9A

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V