BSP50
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- Mfr.Part #
- BSP50
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- BSP50 - SMALL SIGNAL BIPOLAR TRA
- Stock
- 4,880
- In Stock ：
- 4,880
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 39 Weeks
- Radiation Hardening :
- No
- Length :
- 6.5mm
- Terminal Position :
- Dual
- Transition Frequency :
- 200MHz
- Number of Terminations :
- 4
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 45V
- Voltage - Rated DC :
- 45V
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Collector Base Voltage (VCBO) :
- 60V
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Width :
- 3.5mm
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BSP50
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- 1.3V
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Type :
- NPN - Darlington
- Current - Collector Cutoff (Max) :
- 50nA
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- hFE Min :
- 2000
- Collector Emitter Voltage (VCEO) :
- 45V
- Pbfree Code :
- yes
- Current Rating :
- 800mA
- Weight :
- 188mg
- Height :
- 1.6mm
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 500μA, 500mA
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Number of Pins :
- 4
- Polarity :
- NPN
- Max Collector Current :
- 800mA
- Max Power Dissipation :
- 1W
- Published :
- 1997
- Max Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BSP50
NPN - Darlington -55°C~150°C TJ 50nA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP50 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 2000 @ 500mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.3V @ 500μA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 800mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
BSP50 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 200MHz
BSP50 Applications
There are a lot of ON Semiconductor
BSP50 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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