BSP50H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Width :

3.5mm

Current :

1A

Package / Case :

TO-261-4, TO-261AA

Packaging :

Tape and Reel (TR)

Voltage :

45V

Max Operating Temperature :

150°C

Collector Emitter Breakdown Voltage :

45V

Supplier Device Package :

PG-SOT223-4

Collector Emitter Saturation Voltage :

1.8V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Number of Elements :

1

Base Part Number :

BSP50

Emitter Base Voltage (VEBO) :

5V

Height :

1.6mm

Frequency - Transition :

200MHz

Min Operating Temperature :

-65°C

Collector Emitter Voltage (VCEO) :

1.3V

hFE Min :

1000

Polarity :

NPN

Voltage - Collector Emitter Breakdown (Max) :

45V

Operating Temperature :

150°C TJ

Mount :

Surface Mount

Factory Lead Time :

26 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 500mA 10V

Power - Max :

1.5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.5mm

Max Breakdown Voltage :

45V

Current - Collector (Ic) (Max) :

1A

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1mA, 1A

Max Collector Current :

1A

Published :

2007

Max Power Dissipation :

1.5W

Element Configuration :

Single

Number of Pins :

4

Current - Collector Cutoff (Max) :

10μA

Transistor Type :

NPN - Darlington

Collector Base Voltage (VCBO) :

60V