BSR41,115
- Mfr.Part #
- BSR41,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT89
- Stock
- 93,254
- In Stock :
- 93,254
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 4
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 100MHz
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 1A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1.35W
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2009
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-243AA
- Collector Base Voltage (VCBO) :
- 70V
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Terminal Form :
- Flat
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-F3
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 100MHz
- Max Breakdown Voltage :
- 60V
- Frequency :
- 100MHz
- Power Dissipation :
- 1.35W
- Base Part Number :
- BSR41
- Contact Plating :
- Tin
- Datasheets
- BSR41,115

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BSR41,115 Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BSR41,115 Features
the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BSR41,115 Applications
There are a lot of Nexperia USA Inc.
BSR41,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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