BSS119L6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 10V

Drain-source On Resistance-Max :

6Ohm

HTS Code :

8541.21.00.95

Pbfree Code :

yes

Mounting Type :

Surface Mount

Series :

SIPMOS®

Drain Current-Max (Abs) (ID) :

0.17A

Additional Feature :

LOGIC LEVEL COMPATIBLE

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Power Dissipation-Max :

360mW Ta

Pin Count :

3

Number of Elements :

1

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

2.3V @ 50μA

DS Breakdown Voltage-Min :

100V

Terminal Form :

Gull wing

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Reach Compliance Code :

Unknown

Published :

2002

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

170mA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Feedback Cap-Max (Crss) :

4.1 pF

Drain to Source Voltage (Vdss) :

100V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

6 Ω @ 170mA, 10V

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

78pF @ 25V

Number of Pins :

3