BSS123
- Mfr.Part #
- BSS123
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 170MA SOT23-3
- Stock
- 31,754
- In Stock :
- 31,754
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 100V
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Number of Channels :
- 1
- Turn-Off Delay Time :
- 17 ns
- Published :
- 2003
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 360mW Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Factory Lead Time :
- 8 Weeks
- Voltage - Rated DC :
- 100V
- Continuous Drain Current (ID) :
- 170mA
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- Rds On Max :
- 6 Ω
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Min Operating Temperature :
- -55°C
- Max Junction Temperature (Tj) :
- 150°C
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 9 ns
- Drain to Source Resistance :
- 1.2Ohm
- Length :
- 2.92mm
- Drain to Source Breakdown Voltage :
- 100V
- Threshold Voltage :
- 1.7V
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Ta
- Voltage :
- 100V
- Max Operating Temperature :
- 150°C
- Current :
- 15A
- Input Capacitance :
- 73pF
- Power Dissipation :
- 360mW
- Width :
- 1.3mm
- Rise Time :
- 9ns
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Resistance :
- 6Ohm
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current Rating :
- 170mA
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BSS123
- Height :
- 1.11mm
- Supplier Device Package :
- SOT-23-3
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 170mA, 10V
- Dual Supply Voltage :
- 100V
- Nominal Vgs :
- 1.7 V
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Turn On Delay Time :
- 1.7 ns
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Datasheets
- BSS123

N-Channel Tape & Reel (TR) 6Ohm @ 170mA, 10V ±20V 73pF @ 25V 2.5nC @ 10V 100V TO-236-3, SC-59, SOT-23-3
BSS123 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make BSS123 N-Channel enhancement mode field effect transistors. These components have been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. Low voltage, low current applications like as tiny servo motor control, power MOSFET gate drivers, and other switching applications are well suited for these products.
BSS123 Features
RDS(ON) = 6W @ VGS = 10 V @ 0.17 A, 100 V
RDS(ON) = 10W @ 4.5 V VGS
For extremely low RDS, a high-density cell design is used (ON)
Rugged and dependable
SOT-23 surface mount package is a compact industry standard.
BSS123 Applications
Switching applications.
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