BSS123
- Mfr.Part #
- BSS123
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- N-CH MOSFET 100V 0.2A SOT-23-3L
- Stock
- 47,831
- In Stock :
- 47,831
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 9 ns
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Ta
- Voltage :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Drain to Source Breakdown Voltage :
- 100V
- Power Dissipation :
- 360mW
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Base Part Number :
- BSS123
- Factory Lead Time :
- 8 Weeks
- Max Junction Temperature (Tj) :
- 150°C
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 170mA
- Turn On Delay Time :
- 1.7 ns
- Nominal Vgs :
- 1.7 V
- Drain to Source Voltage (Vdss) :
- 100V
- Threshold Voltage :
- 1.7V
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Number of Channels :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Length :
- 2.92mm
- Supplier Device Package :
- SOT-23-3
- Rds On Max :
- 6 Ω
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 17 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Voltage - Rated DC :
- 100V
- Width :
- 1.3mm
- Max Operating Temperature :
- 150°C
- Packaging :
- Tape and Reel (TR)
- Resistance :
- 6Ohm
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Current :
- 15A
- Drain to Source Resistance :
- 1.2Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Height :
- 1.11mm
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 170mA, 10V
- Input Capacitance :
- 73pF
- Power Dissipation-Max :
- 360mW Ta
- Min Operating Temperature :
- -55°C
- Rise Time :
- 9ns
- Published :
- 2003
- Element Configuration :
- Single
- Dual Supply Voltage :
- 100V
- Current Rating :
- 170mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BSS123

N-Channel Tape & Reel (TR) 6Ohm @ 170mA, 10V ±20V 73pF @ 25V 2.5nC @ 10V 100V TO-236-3, SC-59, SOT-23-3
BSS123 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make BSS123 N-Channel enhancement mode field effect transistors. These components have been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. Low voltage, low current applications like as tiny servo motor control, power MOSFET gate drivers, and other switching applications are well suited for these products.
BSS123 Features
RDS(ON) = 6W @ VGS = 10 V @ 0.17 A, 100 V
RDS(ON) = 10W @ 4.5 V VGS
For extremely low RDS, a high-density cell design is used (ON)
Rugged and dependable
SOT-23 surface mount package is a compact industry standard.
BSS123 Applications
Switching applications.
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