BSS123E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

2.67nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Voltage - Rated DC :

100V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

3

Continuous Drain Current (ID) :

170mA

JESD-609 Code :

e3

Power Dissipation :

360mW

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Contains Lead

Published :

1999

Terminal Form :

Gull wing

Feedback Cap-Max (Crss) :

6 pF

Rise Time :

5ns

Rds On (Max) @ Id, Vgs :

6 Ω @ 170mA, 10V

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

69pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Current Rating :

170mA

Vgs(th) (Max) @ Id :

1.8V @ 50µA

Power Dissipation-Max :

360mW Ta

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Number of Pins :

3

Pin Count :

3

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Series :

SIPMOS®

Transistor Application :

SWITCHING