BSS123L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

21.5pF @ 25V

Drain to Source Breakdown Voltage :

100V

Number of Terminations :

3

Max Junction Temperature (Tj) :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Power Dissipation :

225mW

Transistor Application :

SWITCHING

Weight :

30mg

Turn On Delay Time :

20 ns

Mounting Type :

Surface Mount

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

360mW Ta

Continuous Drain Current (ID) :

170mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Mount :

Surface Mount

Number of Pins :

3

Threshold Voltage :

1.6V

Turn-Off Delay Time :

40 ns

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

5.6 ns

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 10V

FET Type :

N-Channel

Pbfree Code :

yes

Vgs (Max) :

±20V

Published :

2012

Factory Lead Time :

8 Weeks

Vgs(th) (Max) @ Id :

2V @ 1mA

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Rds On (Max) @ Id, Vgs :

6 Ω @ 170mA, 10V

Rise Time :

1.7ns

Height :

1.11mm

JESD-609 Code :

e3

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260