BSS123NH6433XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

10 Weeks

Current - Continuous Drain (Id) @ 25°C :

190mA Ta

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Turn-Off Delay Time :

7.4 ns

Reference Standard :

AEC-Q101

Rds On (Max) @ Id, Vgs :

6 Ω @ 190mA, 10V

Mount :

Surface Mount

Height :

1mm

Packaging :

Cut Tape (CT)

Drain Current-Max (Abs) (ID) :

0.19A

Length :

2.9mm

Drain to Source Voltage (Vdss) :

100V

Input Capacitance (Ciss) (Max) @ Vds :

20.9pF @ 25V

Series :

OptiMOS™

Number of Elements :

1

FET Type :

N-Channel

DS Breakdown Voltage-Min :

100V

Power Dissipation-Max :

500mW Ta

Turn On Delay Time :

2.3 ns

Fall Time (Typ) :

22 ns

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Terminal Position :

Dual

Number of Pins :

3

Element Configuration :

Single

Additional Feature :

LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

0.9nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2012

Continuous Drain Current (ID) :

190mA

Mounting Type :

Surface Mount

Rise Time :

3.2ns

Vgs(th) (Max) @ Id :

1.8V @ 13μA

Drain-source On Resistance-Max :

6Ohm

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pbfree Code :

yes

Width :

1.3mm

Operating Temperature :

-55°C~150°C TJ