BSS127L6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

28pF @ 25V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Mounting Type :

Surface Mount

Series :

SIPMOS®

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Number of Terminations :

3

Power Dissipation-Max :

500mW Ta

Feedback Cap-Max (Crss) :

1.5 pF

Rds On (Max) @ Id, Vgs :

500 Ω @ 16mA, 10V

DS Breakdown Voltage-Min :

600V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

HTS Code :

8541.21.00.95

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

600Ohm

Current - Continuous Drain (Id) @ 25°C :

21mA Ta

Mount :

Surface Mount

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Published :

2010

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

600V

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Continuous Drain Current (ID) :

21mA

Drain Current-Max (Abs) (ID) :

0.021A

Vgs(th) (Max) @ Id :

2.6V @ 8μA

Number of Elements :

1