BSS139H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

JESD-609 Code :

e3

Published :

2006

Power Dissipation-Max :

360mW Ta

Number of Terminations :

3

Number of Channels :

1

Max Dual Supply Voltage :

250V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Rds On (Max) @ Id, Vgs :

14 Ω @ 100μA, 10V

Dual Supply Voltage :

250V

Termination :

SMD/SMT

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

REACH SVHC :

No SVHC

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

100mA Ta

FET Feature :

Depletion Mode

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Factory Lead Time :

10 Weeks

Threshold Voltage :

-1.4V

Input Capacitance (Ciss) (Max) @ Vds :

76pF @ 25V

Vgs (Max) :

±20V

Rise Time :

5.4ns

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

3.5nC @ 5V

Mount :

Surface Mount

Pin Count :

3

Width :

3.05mm

RoHS Status :

ROHS3 Compliant

Power Dissipation :

360mW

Vgs(th) (Max) @ Id :

1V @ 56μA

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Halogen Free :

Halogen Free

Lead Free :

Lead Free

FET Type :

N-Channel

Nominal Vgs :

-1.4 V

Series :

SIPMOS®

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Contact Plating :

Tin

Continuous Drain Current (ID) :

40mA