BSS192PL6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

190mA Ta

Published :

2002

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

1W Ta

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1W

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Gate Charge (Qg) (Max) @ Vgs :

6.1nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

104pF @ 25V

Continuous Drain Current (ID) :

190mA

Rds On Max :

12 Ω

Drain to Source Voltage (Vdss) :

250V

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 130µA

Input Capacitance :

104pF

Fall Time (Typ) :

50 ns

Supplier Device Package :

PG-SOT89

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

RoHS Compliant

Rise Time :

5.2ns

Number of Pins :

4

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

12Ohm @ 190mA, 10V

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Mount :

Surface Mount

FET Type :

P-Channel

Turn-Off Delay Time :

72 ns

Mounting Type :

Surface Mount

Package / Case :

TO-243AA

Turn On Delay Time :

4.7 ns

Series :

SIPMOS®