BSS5130AHZGT116
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- Mfr.Part #
- BSS5130AHZGT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A SST3
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Frequency - Transition :
- 320MHz
- Mounting Type :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Current - Collector (Ic) (Max) :
- 1A
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Reach Compliance Code :
- Compliant
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Series :
- Automotive, AEC-Q101
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Factory Lead Time :
- 8 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 380mV @ 25mA, 500mA
- Power - Max :
- 200mW
- Datasheets
- BSS5130AHZGT116
PNP 150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSS5130AHZGT116 Overview
This device has a DC current gain of 270 @ 100mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 30V maximal voltage is present.
BSS5130AHZGT116 Features
the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 380mV @ 25mA, 500mA
BSS5130AHZGT116 Applications
There are a lot of ROHM Semiconductor
BSS5130AHZGT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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