BSS63,215
- Mfr.Part #
- BSS63,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 100MA SOT23
- Stock
- 3,096
- In Stock :
- 3,096
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 85MHz
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 2.5mA, 25mA
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 25mA 1V
- hFE Min :
- 30
- Collector Base Voltage (VCBO) :
- 110V
- Collector Emitter Voltage (VCEO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Frequency :
- 85MHz
- Max Collector Current :
- 100mA
- Base Part Number :
- BSS63
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 100V
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Series :
- Automotive, AEC-Q101
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 250mW
- Contact Plating :
- Tin
- Pin Count :
- 3
- Published :
- 2006
- Transition Frequency :
- 85MHz
- Datasheets
- BSS63,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSS63,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 25mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 85MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 100mA volts.
BSS63,215 Features
the DC current gain for this device is 30 @ 25mA 1V
the vce saturation(Max) is 250mV @ 2.5mA, 25mA
the emitter base voltage is kept at 6V
a transition frequency of 85MHz
BSS63,215 Applications
There are a lot of Nexperia USA Inc.
BSS63,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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