BSS64
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- Mfr.Part #
- BSS64
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.2A SOT23-3
- Stock
- 12,507
- In Stock ：
- 12,507
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 350mW
- Number of Pins :
- 3
- Published :
- 2000
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 200mV
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Length :
- 2.92mm
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Gain Bandwidth Product :
- 60MHz
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Factory Lead Time :
- 39 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 60MHz
- Transistor Type :
- NPN
- Height :
- 930μm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 200mA
- Max Breakdown Voltage :
- 80V
- Voltage - Rated DC :
- -80V
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 350mW
- Collector Emitter Voltage (VCEO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 15mA, 50mA
- Number of Terminations :
- 3
- Current Rating :
- -200mA
- Weight :
- 30mg
- hFE Min :
- 20
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Frequency :
- 60MHz
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 10mA 1V
- Element Configuration :
- Single
- Width :
- 1.3mm
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 120V
- Base Part Number :
- BSS64
- Collector Emitter Breakdown Voltage :
- 80V
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- BSS64
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSS64 Overview
In this device, the DC current gain is 20 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 15mA, 50mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -200mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 60MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
BSS64 Features
the DC current gain for this device is 20 @ 10mA 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 15mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 60MHz
BSS64 Applications
There are a lot of ON Semiconductor
BSS64 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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