BSS84DW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

15 Weeks

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Voltage - Rated DC :

-50V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

50V

Rds On (Max) @ Id, Vgs :

10 Ω @ 100mA, 5V

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Resistance :

10Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Dual Supply Voltage :

-50V

FET Type :

2 P-Channel (Dual)

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

FET Feature :

Logic Level Gate

Width :

1.35mm

ECCN Code :

EAR99

Turn-Off Delay Time :

18 ns

Number of Terminations :

6

Radiation Hardening :

No

Pin Count :

6

Element Configuration :

Dual

Length :

2.2mm

Power Dissipation :

300mW

Turn On Delay Time :

10 ns

Current Rating :

-130mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Max Power Dissipation :

300mW

Contact Plating :

Tin

Weight :

6.010099mg

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Pins :

6

Drain Current-Max (Abs) (ID) :

0.13A

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 25V

REACH SVHC :

No SVHC

Termination :

SMD/SMT

Height :

1mm

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

-50V

Nominal Vgs :

-1.6 V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

130mA

Number of Elements :

2

Vgs(th) (Max) @ Id :

2V @ 1mA

Base Part Number :

BSS84DW

Peak Reflow Temperature (Cel) :

260

Min Breakdown Voltage :

50V

Terminal Form :

Gull wing

Threshold Voltage :

-1.6V

Number of Channels :

2

JESD-609 Code :

e3

Published :

2007

Mount :

Surface Mount