BSS84DW-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Voltage - Rated DC :

-50V

Threshold Voltage :

-1.6V

Number of Terminations :

6

Contact Plating :

Tin

Drain Current-Max (Abs) (ID) :

0.13A

Published :

2007

REACH SVHC :

No SVHC

Max Power Dissipation :

300mW

Terminal Form :

Gull wing

Base Part Number :

BSS84DW

Transistor Element Material :

SILICON

Radiation Hardening :

No

Mount :

Surface Mount

Pin Count :

6

Width :

1.35mm

Package / Case :

6-TSSOP, SC-88, SOT-363

ECCN Code :

EAR99

Length :

2.2mm

Drain to Source Voltage (Vdss) :

50V

Continuous Drain Current (ID) :

130mA

Gate to Source Voltage (Vgs) :

20V

Termination :

SMD/SMT

Mounting Type :

Surface Mount

Turn On Delay Time :

10 ns

Transistor Application :

SWITCHING

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Dual Supply Voltage :

-50V

Height :

1mm

Vgs(th) (Max) @ Id :

2V @ 1mA

Turn-Off Delay Time :

18 ns

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 25V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

300mW

Current Rating :

-130mA

Number of Pins :

6

Number of Channels :

2

Rds On (Max) @ Id, Vgs :

10 Ω @ 100mA, 5V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 P-Channel (Dual)

Resistance :

10Ohm

Weight :

6.010099mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

-1.6 V

Lead Free :

Lead Free

Min Breakdown Voltage :

50V

JESD-609 Code :

e3

Factory Lead Time :

15 Weeks

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

-50V

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)