BSS84PH6327XTSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2V @ 20μA

Rise Time :

16.2ns

Terminal Position :

Dual

Voltage :

60V

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Continuous Drain Current (ID) :

170mA

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Published :

2002

Contact Plating :

Tin

Length :

2.9mm

Width :

1.3mm

JESD-609 Code :

e3

Number of Elements :

1

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

-60V

Factory Lead Time :

10 Weeks

Current :

17A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

REACH SVHC :

No SVHC

Halogen Free :

Halogen Free

RoHS Status :

ROHS3 Compliant

Series :

SIPMOS®

Height :

900μm

Turn On Delay Time :

6.7 ns

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Threshold Voltage :

-1.5V

Input Capacitance (Ciss) (Max) @ Vds :

19pF @ 25V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Lead Free :

Lead Free

Power Dissipation-Max :

360mW Ta

Element Configuration :

Single

Transistor Application :

SWITCHING

Radiation Hardening :

No

FET Type :

P-Channel

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Nominal Vgs :

-1.5 V

Resistance :

12Ohm

Mount :

Surface Mount

Turn-Off Delay Time :

8.6 ns

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

8 Ω @ 170mA, 10V

Number of Pins :

3

Power Dissipation :

360mW