BSS87,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

4 Weeks

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

400mA Ta

Turn-Off Delay Time :

49 ns

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Width :

2.6mm

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Power Dissipation-Max :

580mW Ta 12.5W Tc

Package / Case :

TO-243AA

Resistance :

3Ohm

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

0.4A

Vgs (Max) :

±20V

Max Dual Supply Voltage :

200V

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 25V

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

FET Type :

N-Channel

Weight :

4.535924g

Operating Mode :

ENHANCEMENT MODE

Published :

2013

Number of Terminations :

3

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Height :

1.6mm

Threshold Voltage :

2.8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

3 Ω @ 400mA, 10V

Power Dissipation :

1W

JESD-609 Code :

e3

Number of Elements :

1

Drain to Source Breakdown Voltage :

200V

Case Connection :

DRAIN

Continuous Drain Current (ID) :

400mA

Lead Free :

Lead Free

Terminal Form :

Flat

Element Configuration :

Single

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Length :

4.6mm

Turn On Delay Time :

6 ns