BSS87E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Series :

SIPMOS®

JESD-30 Code :

R-PSSO-F3

Power Dissipation-Max :

1W Ta

Continuous Drain Current (ID) :

260mA

Vgs(th) (Max) @ Id :

1.8V @ 108μA

Drain Current-Max (Abs) (ID) :

0.29A

Package / Case :

TO-243AA

Power Dissipation :

1W

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Qualification Status :

Not Qualified

Number of Terminations :

3

Lead Free :

Contains Lead

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

6 Ω @ 260mA, 10V

JESD-609 Code :

e0

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 10V

Published :

1999

Rise Time :

10ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

260mA Ta

Peak Reflow Temperature (Cel) :

260

RoHS Status :

Non-RoHS Compliant

Number of Pins :

4

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

LOGIC LEVEL COMPATIBLE

Voltage - Rated DC :

240V

Current Rating :

290mA

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

97pF @ 25V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Terminal Position :

Single

Terminal Finish :

Tin/Lead (Sn/Pb)