BST52,115

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Mfr.Part #
BST52,115
Manufacturer
Nexperia
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS NPN DARL 80V 1A SOT89
Stock
5,626
In Stock :
5,626

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-243AA
Transistor Application :
SWITCHING
Turn On Time-Max (ton) :
400ns
Polarity :
NPN
Collector Base Voltage (VCBO) :
90V
Vce Saturation (Max) @ Ib, Ic :
1.3V @ 500μA, 500mA
ECCN Code :
EAR99
Qualification Status :
Not Qualified
Frequency - Transition :
200MHz
Max Collector Current :
1A
JESD-609 Code :
e3
Series :
Automotive, AEC-Q101
Ambient Temperature Range High :
150°C
Published :
2001
Collector Emitter Voltage (VCEO) :
80V
Height :
1.6mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Type :
NPN - Darlington
Factory Lead Time :
4 Weeks
Number of Pins :
3
Collector Emitter Breakdown Voltage :
80V
Emitter Base Voltage (VEBO) :
5V
Packaging :
Tape and Reel (TR)
Case Connection :
COLLECTOR
hFE Min :
1000
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 500mA 10V
Surface Mount :
yes
Current - Collector Cutoff (Max) :
50nA
Number of Elements :
1
Terminal Position :
Single
Terminal Finish :
Tin (Sn)
Transition Frequency :
200MHz
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Base Part Number :
BST52
Pin Count :
3
Max Junction Temperature (Tj) :
150°C
Power Dissipation :
1.3W
Transistor Element Material :
SILICON
Collector Emitter Saturation Voltage :
1.3V
Number of Terminations :
3
Terminal Form :
Flat
Datasheets
BST52,115
Introducing Transistors - Bipolar (BJT) - Single Nexperia BST52,115 from Xinshop,where excellence meets affordability. This product stands out with its Package / Case:TO-243AA, Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Base Part Number:BST52, Number of Terminations:3, BST52,115 pinout, BST52,115 datasheet PDF, BST52,115 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia BST52,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia BST52,115


NPN - Darlington 150°C TJ 50nA 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount

BST52,115 Overview


In this device, the DC current gain is 2000 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.3V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.3V @ 500μA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.200MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.

BST52,115 Features


the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz


BST52,115 Applications


There are a lot of Nexperia USA Inc.
BST52,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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